@inproceedings{d949e539d32c4f47a6711fe21c76d826,
title = "Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density",
abstract = "We propose a new spintronics-based memory employing the voltage-control-magnetic-anisotropy effect as a bit selecting principle and the spin-orbit-torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.",
author = "H. Yoda and N. Shimomura and Y. Ohsawa and S. Shirotori and Y. Kato and T. Inokuchi and Y. Kamiguchi and B. Altansargai and Y. Saito and K. Koi and H. Sugiyama and S. Oikawa and M. Shimizu and M. Ishikawa and K. Ikegami and A. Kurobe",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",
year = "2017",
month = jan,
day = "31",
doi = "10.1109/IEDM.2016.7838495",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "27.6.1--27.6.4",
booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",
}
