抄録
Spin injection and detection properties in Co 50Fe 50/AlO x/SOI (Si on insulator) junctions were investigated by using Hanle effect measurements up to room temperature. Cross-sectional transmission electron microscope images and Fourier transform images of the Co 50Fe 50/AlO x/SOI junction, fabricated by using appropriate oxidation condition, indicate the AlO x layer became single-crystal-like and spin injection and detection were realized at room temperature. In contrast, in junction fabricated by using excess oxidation condition, AlO x layer became poly-crystal-like and spin injection was not realized though spin injection was realized below 150 K. These results indicate that appropriate oxidation is essential to fabricate AlO x tunnel barrier with good crystallinity and realize spin injection and detection at room temperature.
本文言語 | 英語 |
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論文番号 | 07C316 |
ジャーナル | Journal of Applied Physics |
巻 | 111 |
号 | 7 |
DOI | |
出版ステータス | 出版済み - 1 4月 2012 |
外部発表 | はい |