Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

Takao Marukame; Tomoaki Inokuchi; Mizue Ishikawa; Hideyuki Sugiyama; Yoshiaki Saito

doi:10.1109/IEDM.2009.5424385

Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

Takao Marukame, Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito

Toshiba Corporation

研究成果: 書籍の章/レポート/Proceedings › 会議への寄与 › 査読

12 被引用数 (Scopus)

抄録

For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; "Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)" that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.

本文言語	英語
ホスト出版物のタイトル	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
ページ	9.2.1-9.2.4
DOI	https://doi.org/10.1109/IEDM.2009.5424385
出版ステータス	出版済み - 2009
外部発表	はい
イベント	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, 米国継続期間: 7 12月 2009 → 9 12月 2009

出版物シリーズ

名前	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（印刷版）	0163-1918

会議

会議	2009 International Electron Devices Meeting, IEDM 2009
国/地域	米国
City	Baltimore, MD
Period	7/12/09 → 9/12/09

文献へのアクセス

10.1109/IEDM.2009.5424385

他のファイルとリンク

Scopusの出版物のリンク

フィンガープリント

「Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Marukame, T., Inokuchi, T., Ishikawa, M., Sugiyama, H., & Saito, Y. (2009). Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 9.2.1-9.2.4). 記事 5424385 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424385

@inproceedings{cbea99ce32074c5991005682c6a21cf3,

title = "Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices",

abstract = "For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; {"}Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET){"} that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.",

author = "Takao Marukame and Tomoaki Inokuchi and Mizue Ishikawa and Hideyuki Sugiyama and Yoshiaki Saito",

year = "2009",

doi = "10.1109/IEDM.2009.5424385",

language = "English",

isbn = "9781424456406",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "9.2.1--9.2.4",

booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",

note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",

}

Marukame, T, Inokuchi, T, Ishikawa, M, Sugiyama, H & Saito, Y 2009, Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424385, Technical Digest - International Electron Devices Meeting, IEDM, pp. 9.2.1-9.2.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, 米国, 7/12/09. https://doi.org/10.1109/IEDM.2009.5424385

Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices. / Marukame, Takao; Inokuchi, Tomoaki; Ishikawa, Mizue その他.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 9.2.1-9.2.4 5424385 (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: 書籍の章/レポート/Proceedings › 会議への寄与 › 査読

TY - GEN

T1 - Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

AU - Marukame, Takao

AU - Inokuchi, Tomoaki

AU - Ishikawa, Mizue

AU - Sugiyama, Hideyuki

AU - Saito, Yoshiaki

PY - 2009

Y1 - 2009

N2 - For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; "Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)" that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.

AB - For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; "Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)" that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.

UR - http://www.scopus.com/inward/record.url?scp=77952329486&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2009.5424385

DO - 10.1109/IEDM.2009.5424385

M3 - Conference contribution

AN - SCOPUS:77952329486

SN - 9781424456406

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 9.2.1-9.2.4

BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest

T2 - 2009 International Electron Devices Meeting, IEDM 2009

Y2 - 7 December 2009 through 9 December 2009

ER -

Marukame T, Inokuchi T, Ishikawa M, Sugiyama H, Saito Y. Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 9.2.1-9.2.4. 5424385. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424385