Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

T. Inokuchi; H. Yoda; Y. Kato; M. Shimizu; S. Shirotori; N. Shimomura; K. Koi; Y. Kamiguchi; H. Sugiyama; S. Oikawa; K. Ikegami; M. Ishikawa; B. Altansargai; A. Tiwari; Y. Ohsawa; Y. Saito; A. Kurobe

doi:10.1063/1.4986923

Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

T. Inokuchi, H. Yoda, Y. Kato, M. Shimizu, S. Shirotori, N. Shimomura, K. Koi, Y. Kamiguchi, H. Sugiyama, S. Oikawa, K. Ikegami, M. Ishikawa, B. Altansargai, A. Tiwari, Y. Ohsawa, Y. Saito, A. Kurobe

Toshiba Corporation

研究成果: ジャーナルへの寄稿 › 記事 › 査読

33 被引用数 (Scopus)

抄録

A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from -1.0 V to +1.0 V. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m² to 1.6 mJ/m², which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 10⁸ cycles by controlling read and write sequences.

本文言語	英語
論文番号	252404
ジャーナル	Applied Physics Letters
巻	110
号	25
DOI	https://doi.org/10.1063/1.4986923
出版ステータス	出版済み - 19 6月 2017
外部発表	はい

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10.1063/1.4986923

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引用スタイル

Inokuchi, T., Yoda, H., Kato, Y., Shimizu, M., Shirotori, S., Shimomura, N., Koi, K., Kamiguchi, Y., Sugiyama, H., Oikawa, S., Ikegami, K., Ishikawa, M., Altansargai, B., Tiwari, A., Ohsawa, Y., Saito, Y., & Kurobe, A. (2017). Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height. Applied Physics Letters, 110(25), 記事 252404. https://doi.org/10.1063/1.4986923

@article{e88141cf537d4f71be5b9a8077bba66b,

title = "Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height",

abstract = "A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from -1.0 V to +1.0 V. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m2 to 1.6 mJ/m2, which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 108 cycles by controlling read and write sequences.",

author = "T. Inokuchi and H. Yoda and Y. Kato and M. Shimizu and S. Shirotori and N. Shimomura and K. Koi and Y. Kamiguchi and H. Sugiyama and S. Oikawa and K. Ikegami and M. Ishikawa and B. Altansargai and A. Tiwari and Y. Ohsawa and Y. Saito and A. Kurobe",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = jun,

day = "19",

doi = "10.1063/1.4986923",

language = "English",

volume = "110",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

Inokuchi, T, Yoda, H, Kato, Y, Shimizu, M, Shirotori, S, Shimomura, N, Koi, K, Kamiguchi, Y, Sugiyama, H, Oikawa, S, Ikegami, K, Ishikawa, M, Altansargai, B, Tiwari, A, Ohsawa, Y, Saito, Y & Kurobe, A 2017, 'Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height', Applied Physics Letters, vol. 110, no. 25, 252404. https://doi.org/10.1063/1.4986923

TY - JOUR

T1 - Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

AU - Inokuchi, T.

AU - Yoda, H.

AU - Kato, Y.

AU - Shimizu, M.

AU - Shirotori, S.

AU - Shimomura, N.

AU - Koi, K.

AU - Kamiguchi, Y.

AU - Sugiyama, H.

AU - Oikawa, S.

AU - Ikegami, K.

AU - Ishikawa, M.

AU - Altansargai, B.

AU - Tiwari, A.

AU - Ohsawa, Y.

AU - Saito, Y.

AU - Kurobe, A.

PY - 2017/6/19

Y1 - 2017/6/19

N2 - A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from -1.0 V to +1.0 V. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m2 to 1.6 mJ/m2, which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 108 cycles by controlling read and write sequences.

AB - A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from -1.0 V to +1.0 V. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m2 to 1.6 mJ/m2, which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 108 cycles by controlling read and write sequences.

UR - http://www.scopus.com/inward/record.url?scp=85021078584&partnerID=8YFLogxK

U2 - 10.1063/1.4986923

DO - 10.1063/1.4986923

M3 - Article

AN - SCOPUS:85021078584

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252404

ER -