TY - GEN
T1 - High-Speed Voltage Control Spintronics Memory (VoCSM) Having Broad Design Windows
AU - Shimomura, Naoharu
AU - Yoda, Hiroaki
AU - Inokuchi, Tomoaki
AU - Koi, Katsuhiko
AU - Sugiyama, Hideyuki
AU - Kato, Yushi
AU - Ohsawa, Yuichi
AU - Buyandalai, Altansargai
AU - Shirotori, Satoshi
AU - Oikawa, Soichi
AU - Shimizu, Mariko
AU - Ishikawa, Mizue
AU - Ajay, Tiwari
AU - Kurobe, Atsushi
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/10/22
Y1 - 2018/10/22
N2 - Voltage Control Spintronics Memory (VoCSM) is a magnetic memory combining the spin Hall effect and Voltage Controlled Magnetic Anisotropy (VCMA). It has the potential to make MRAM work faster. In this paper, we described memory design of a write window and a read window of high-speed VoCSM from experimental data. The design windows of both writing and reading are large enough for gigabit memory.
AB - Voltage Control Spintronics Memory (VoCSM) is a magnetic memory combining the spin Hall effect and Voltage Controlled Magnetic Anisotropy (VCMA). It has the potential to make MRAM work faster. In this paper, we described memory design of a write window and a read window of high-speed VoCSM from experimental data. The design windows of both writing and reading are large enough for gigabit memory.
UR - http://www.scopus.com/inward/record.url?scp=85056818061&partnerID=8YFLogxK
U2 - 10.1109/VLSIC.2018.8502420
DO - 10.1109/VLSIC.2018.8502420
M3 - Conference contribution
AN - SCOPUS:85056818061
T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers
SP - 83
EP - 84
BT - 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
Y2 - 18 June 2018 through 22 June 2018
ER -