Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system

Yushi Kato, Hiroaki Yoda, Yoshiaki Saito, Soichi Oikawa, Keiko Fujii, Masahiko Yoshiki, Katsuhiko Koi, Hideyuki Sugiyama, Mizue Ishikawa, Tomoaki Inokuchi, Naoharu Shimomura, Mariko Shimizu, Satoshi Shirotori, Buyandalai Altansargai, Yuichi Ohsawa, Kazutaka Ikegami, Ajay Tiwari, Atsushi Kurobe

研究成果: ジャーナルへの寄稿記事査読

33 被引用数 (Scopus)

抄録

We experimentally demonstrate a giant voltage-controlled magnetic anisotropy (VCMA) coefficient in a crystallographically strained CoFe layer (>15 monolayers in thickness) in a MgO/CoFe/Ir system. We observed a strong applied voltage dependence of saturation field and an asymmetric concave behavior with giant VCMA coefficients of %758 and 1043 fJ V%1 m%1. The result of structural analysis reveals epitaxial growth in MgO/ CoFe/Ir layers and the orientation relationship MgO(001)[110] k CoFe(001)[100] k Ir(001)[110]. The CoFe layer has a bcc structure and a tetragonal distortion due to the lattice mismatch; therefore, the CoFe layer has a large perpendicular magnetic anisotropy.

本文言語英語
論文番号053007
ジャーナルApplied Physics Express
11
5
DOI
出版ステータス出版済み - 5月 2018
外部発表はい

フィンガープリント

「Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル