抄録
We experimentally demonstrate a giant voltage-controlled magnetic anisotropy (VCMA) coefficient in a crystallographically strained CoFe layer (>15 monolayers in thickness) in a MgO/CoFe/Ir system. We observed a strong applied voltage dependence of saturation field and an asymmetric concave behavior with giant VCMA coefficients of %758 and 1043 fJ V%1 m%1. The result of structural analysis reveals epitaxial growth in MgO/ CoFe/Ir layers and the orientation relationship MgO(001)[110] k CoFe(001)[100] k Ir(001)[110]. The CoFe layer has a bcc structure and a tetragonal distortion due to the lattice mismatch; therefore, the CoFe layer has a large perpendicular magnetic anisotropy.
本文言語 | 英語 |
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論文番号 | 053007 |
ジャーナル | Applied Physics Express |
巻 | 11 |
号 | 5 |
DOI | |
出版ステータス | 出版済み - 5月 2018 |
外部発表 | はい |