From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption

H. Yoda; Y. Ohsawa; Y. Kato; N. Shimomura; M. Shimizu; K. Koi; S. Shirotori; T. Inokuchi; H. Sugiyama; S. Oikawa; B. Altansargai; M. Ishikawa; A. Kurobe

doi:10.4283/JMAG.2019.24.1.107

From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption

H. Yoda, Y. Ohsawa, Y. Kato, N. Shimomura, M. Shimizu, K. Koi, S. Shirotori, T. Inokuchi, H. Sugiyama, S. Oikawa, B. Altansargai, M. Ishikawa, A. Kurobe

Toshiba Corporation

研究成果: ジャーナルへの寄稿 › 記事 › 査読

4 被引用数 (Scopus)

抄録

We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (I _csw ) smaller than 50 µA at 20 nsec. for designed MTJ size of about 50 × 150 nm ² . The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of I _csw further reduction of I _csw is estimated to clarify that VoCSM has a potential to reduce I _csw down to several µA.

本文言語	英語
ページ（範囲）	107-111
ページ数	5
ジャーナル	Journal of Magnetics
巻	24
号	1
DOI	https://doi.org/10.4283/JMAG.2019.24.1.107
出版ステータス	出版済み - 2019
外部発表	はい

UN SDG

この成果は、次の持続可能な開発目標に貢献しています

文献へのアクセス

10.4283/JMAG.2019.24.1.107

他のファイルとリンク

Scopusの出版物のリンク

引用スタイル

Yoda, H., Ohsawa, Y., Kato, Y., Shimomura, N., Shimizu, M., Koi, K., Shirotori, S., Inokuchi, T., Sugiyama, H., Oikawa, S., Altansargai, B., Ishikawa, M., & Kurobe, A. (2019). From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption. Journal of Magnetics, 24(1), 107-111. https://doi.org/10.4283/JMAG.2019.24.1.107

@article{da740b573017437da65a1a380b38d242,

title = "From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption",

abstract = " We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (I csw ) smaller than 50 µA at 20 nsec. for designed MTJ size of about 50 × 150 nm 2 . The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of I csw further reduction of I csw is estimated to clarify that VoCSM has a potential to reduce I csw down to several µA.",

keywords = "MRAM, Spin Hall, Spintronics, Voltage-control magnetic anisotropy, Voltage-control spintronics memory",

author = "H. Yoda and Y. Ohsawa and Y. Kato and N. Shimomura and M. Shimizu and K. Koi and S. Shirotori and T. Inokuchi and H. Sugiyama and S. Oikawa and B. Altansargai and M. Ishikawa and A. Kurobe",

year = "2019",

doi = "10.4283/JMAG.2019.24.1.107",

language = "English",

volume = "24",

pages = "107--111",

journal = "Journal of Magnetics",

issn = "1226-1750",

publisher = "The Korean Magnestics Society",

number = "1",

}

Yoda, H, Ohsawa, Y, Kato, Y, Shimomura, N, Shimizu, M, Koi, K, Shirotori, S, Inokuchi, T, Sugiyama, H, Oikawa, S, Altansargai, B, Ishikawa, M & Kurobe, A 2019, 'From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption', Journal of Magnetics, vol. 24, no. 1, pp. 107-111. https://doi.org/10.4283/JMAG.2019.24.1.107

TY - JOUR

T1 - From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption

AU - Yoda, H.

AU - Ohsawa, Y.

AU - Kato, Y.

AU - Shimomura, N.

AU - Shimizu, M.

AU - Koi, K.

AU - Shirotori, S.

AU - Inokuchi, T.

AU - Sugiyama, H.

AU - Oikawa, S.

AU - Altansargai, B.

AU - Ishikawa, M.

AU - Kurobe, A.

PY - 2019

Y1 - 2019

N2 - We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (I csw ) smaller than 50 µA at 20 nsec. for designed MTJ size of about 50 × 150 nm 2 . The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of I csw further reduction of I csw is estimated to clarify that VoCSM has a potential to reduce I csw down to several µA.

AB - We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (I csw ) smaller than 50 µA at 20 nsec. for designed MTJ size of about 50 × 150 nm 2 . The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of I csw further reduction of I csw is estimated to clarify that VoCSM has a potential to reduce I csw down to several µA.

KW - MRAM

KW - Spin Hall

KW - Spintronics

KW - Voltage-control magnetic anisotropy

KW - Voltage-control spintronics memory

UR - http://www.scopus.com/inward/record.url?scp=85065026816&partnerID=8YFLogxK

U2 - 10.4283/JMAG.2019.24.1.107

DO - 10.4283/JMAG.2019.24.1.107

M3 - Article

AN - SCOPUS:85065026816

SN - 1226-1750

VL - 24

SP - 107

EP - 111

JO - Journal of Magnetics

JF - Journal of Magnetics

IS - 1

ER -

From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption

抄録

UN SDG

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル