抄録
We have investigated the impact of F-doing on CeO1-xFxBiS2 in terms of the electronic-structural parameters of Anderson's impurity-model analysis. It was recently reported using Ce L3-edge x-ray absorption spectroscopy (XAS) that CeOBiS2 falls in the Ce valence fluctuation regime and the F-doping drives the system into the Kondo regime. The Ce L3- edge XAS spectra with the various F-doping levels can be reproduced by adjusting the transfer integral in the Anderson's impurity model. The present analysis indicates that the F-doping to the system corresponds to the decrease of the Ce-Bi transfer integral.
本文言語 | 英語 |
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論文番号 | 012073 |
ジャーナル | Journal of Physics: Conference Series |
巻 | 592 |
号 | 1 |
DOI | |
出版ステータス | 出版済み - 2014 |
外部発表 | はい |
イベント | 2014 International Conference on Strongly Correlated Electron Systems, SCES 2014 - Grenoble, フランス 継続期間: 7 7月 2014 → 14 7月 2014 |