Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

H. Yoda; N. Shimomura; Y. Ohsawa; S. Shirotori; Y. Kato; T. Inokuchi; Y. Kamiguchi; B. Altansargai; Y. Saito; K. Koi; H. Sugiyama; S. Oikawa; M. Shimizu; M. Ishikawa; K. Ikegami; A. Kurobe

doi:10.1109/IEDM.2016.7838495

Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

H. Yoda
, N. Shimomura
, Y. Ohsawa
, S. Shirotori
, Y. Kato
, T. Inokuchi
, Y. Kamiguchi
, B. Altansargai
, Y. Saito
, K. Koi
, H. Sugiyama
, S. Oikawa
, M. Shimizu
, M. Ishikawa
, K. Ikegami
, A. Kurobe

Toshiba Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

34 Citations (Scopus)

Abstract

We propose a new spintronics-based memory employing the voltage-control-magnetic-anisotropy effect as a bit selecting principle and the spin-orbit-torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	27.6.1-27.6.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838495
Publication status	Published - Dec 2016
Externally published	Yes
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	0
ISSN (Print)	0163-1918

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/IEDM.2016.7838495

Cite this

Yoda, H., Shimomura, N., Ohsawa, Y., Shirotori, S., Kato, Y., Inokuchi, T., Kamiguchi, Y., Altansargai, B., Saito, Y., Koi, K., Sugiyama, H., Oikawa, S., Shimizu, M., Ishikawa, M., Ikegami, K., & Kurobe, A. (2016). Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 27.6.1-27.6.4). Article 7838495 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 0). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838495

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title = "Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density",

abstract = "We propose a new spintronics-based memory employing the voltage-control-magnetic-anisotropy effect as a bit selecting principle and the spin-orbit-torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.",

author = "H. Yoda and N. Shimomura and Y. Ohsawa and S. Shirotori and Y. Kato and T. Inokuchi and Y. Kamiguchi and B. Altansargai and Y. Saito and K. Koi and H. Sugiyama and S. Oikawa and M. Shimizu and M. Ishikawa and K. Ikegami and A. Kurobe",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

year = "2016",

month = dec,

doi = "10.1109/IEDM.2016.7838495",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "27.6.1--27.6.4",

booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",

}

Yoda, H, Shimomura, N, Ohsawa, Y, Shirotori, S, Kato, Y, Inokuchi, T, Kamiguchi, Y, Altansargai, B, Saito, Y, Koi, K, Sugiyama, H, Oikawa, S, Shimizu, M, Ishikawa, M, Ikegami, K & Kurobe, A 2016, Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838495, Technical Digest - International Electron Devices Meeting, IEDM, vol. 0, Institute of Electrical and Electronics Engineers Inc., pp. 27.6.1-27.6.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838495

Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density. / Yoda, H.; Shimomura, N.; Ohsawa, Y. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 27.6.1-27.6.4 7838495 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 0).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

AU - Yoda, H.

AU - Shimomura, N.

AU - Ohsawa, Y.

AU - Shirotori, S.

AU - Kato, Y.

AU - Inokuchi, T.

AU - Kamiguchi, Y.

AU - Altansargai, B.

AU - Saito, Y.

AU - Koi, K.

AU - Sugiyama, H.

AU - Oikawa, S.

AU - Shimizu, M.

AU - Ishikawa, M.

AU - Ikegami, K.

AU - Kurobe, A.

PY - 2016/12

Y1 - 2016/12

N2 - We propose a new spintronics-based memory employing the voltage-control-magnetic-anisotropy effect as a bit selecting principle and the spin-orbit-torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.

AB - We propose a new spintronics-based memory employing the voltage-control-magnetic-anisotropy effect as a bit selecting principle and the spin-orbit-torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.

UR - https://www.scopus.com/pages/publications/85014449315

U2 - 10.1109/IEDM.2016.7838495

DO - 10.1109/IEDM.2016.7838495

M3 - Conference contribution

AN - SCOPUS:85014449315

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 27.6.1-27.6.4

BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

Y2 - 3 December 2016 through 7 December 2016

ER -

Yoda H, Shimomura N, Ohsawa Y, Shirotori S, Kato Y, Inokuchi T et al. Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 27.6.1-27.6.4. 7838495. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838495

Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

Abstract

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