Spin relaxation through lateral spin transport in heavily doped n -type silicon

M. Ishikawa, T. Oka, Y. Fujita, H. Sugiyama, Y. Saito, K. Hamaya

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41 Citations (Scopus)


We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n-type silicon (n+-Si) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si. By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

Original languageEnglish
Article number115302
JournalPhysical Review B
Issue number11
Publication statusPublished - 3 Mar 2017
Externally publishedYes


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