Spin injection, transport, and read/write operation in spin-based MOSFET

Yoshiaki Saito; Takao Marukame; Tomoaki Inokuchi; Mizue Ishikawa; Hideyuki Sugiyama; Tetsufumi Tanamoto

doi:10.1016/j.tsf.2011.03.073

Spin injection, transport, and read/write operation in spin-based MOSFET

Yoshiaki Saito, Takao Marukame, Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Tetsufumi Tanamoto

Toshiba Corporation

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

We proposed a novel spin-based MOSFET "Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)" that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co₂Fe₁Al_0.5Si_0.5) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10⁵ cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.

Original language	English
Pages (from-to)	8266-8273
Number of pages	8
Journal	Thin Solid Films
Volume	519
Issue number	23
DOIs	https://doi.org/10.1016/j.tsf.2011.03.073
Publication status	Published - 30 Sept 2011
Externally published	Yes

Keywords

Heusler alloy
Magnetocurrent ratio
Read/write endurance
Spin-dependent transport
Spin-MOSFET
Spin-transfer- torque-switching

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10.1016/j.tsf.2011.03.073

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@article{ae908edca4074dffa3b29c0c5d1dfdec,

title = "Spin injection, transport, and read/write operation in spin-based MOSFET",

abstract = "We proposed a novel spin-based MOSFET {"}Spin-Transfer-torque-Switching MOSFET (STS-MOSFET){"} that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co2Fe1Al0.5Si0.5) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.",

keywords = "Heusler alloy, Magnetocurrent ratio, Read/write endurance, Spin-dependent transport, Spin-MOSFET, Spin-transfer- torque-switching",

author = "Yoshiaki Saito and Takao Marukame and Tomoaki Inokuchi and Mizue Ishikawa and Hideyuki Sugiyama and Tetsufumi Tanamoto",

year = "2011",

month = sep,

day = "30",

doi = "10.1016/j.tsf.2011.03.073",

language = "English",

volume = "519",

pages = "8266--8273",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "23",

}

TY - JOUR

T1 - Spin injection, transport, and read/write operation in spin-based MOSFET

AU - Saito, Yoshiaki

AU - Marukame, Takao

AU - Inokuchi, Tomoaki

AU - Ishikawa, Mizue

AU - Sugiyama, Hideyuki

AU - Tanamoto, Tetsufumi

PY - 2011/9/30

Y1 - 2011/9/30

N2 - We proposed a novel spin-based MOSFET "Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)" that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co2Fe1Al0.5Si0.5) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.

AB - We proposed a novel spin-based MOSFET "Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)" that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co2Fe1Al0.5Si0.5) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.

KW - Heusler alloy

KW - Magnetocurrent ratio

KW - Read/write endurance

KW - Spin-dependent transport

KW - Spin-MOSFET

KW - Spin-transfer- torque-switching

UR - http://www.scopus.com/inward/record.url?scp=80052758874&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.03.073

DO - 10.1016/j.tsf.2011.03.073

M3 - Article

AN - SCOPUS:80052758874

SN - 0040-6090

VL - 519

SP - 8266

EP - 8273

JO - Thin Solid Films

JF - Thin Solid Films

IS - 23

ER -

Spin injection, transport, and read/write operation in spin-based MOSFET

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Keywords

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