@inproceedings{16095bea6ae84d53a30fc05e4900be42,
title = "Spin-based MOSFET and its applications",
abstract = "We developed a novel spintronic device {"}Spin-transfer-Torque Switching-MOSFET (STS-MOSFET){"} which offers non-volatile memory and transistor functions that are CMOS compatible and have high endurance and a fast write time. STS-MOSFETs with Heusler alloy (Co2FeAl 0.5Si0.5) were prepared and reconfigurability of the novel spintronics-based STS-MOSFET was successfully realized in the transport properties. The device showed clear magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. Moreover, the area and speed of million-gate spin FPGAs are numerically benchmarked with CMOS FPGA for 22, 32, and 45 nm technologies including a 20% transistor size variation. We showed that the performance of spin field programmable gate array (FPGA) becomes superior to that of conventional CMOS FPGA as transistor size decreases and MC ratio increases. The overall properties of the STS-MOSFETs show great potentialities for future reconfigurable integrated circuits based on CMOS technology.",
author = "Y. Saito and T. Inokuchi and M. Ishikawa and H. Sugiyama and T. Marukame and T. Tanamoto",
year = "2011",
doi = "10.1149/1.3600742",
language = "English",
isbn = "9781607682523",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "217--228",
booktitle = "2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT",
edition = "1",
note = "3rd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT III ; Conference date: 27-06-2011 Through 01-07-2011",
}