Abstract
The scalability of a field programmable gate array (FPGA) using a spin metal-oxide-semiconductor field effect transistor (MOSFET) (spin FPGA) with a magnetocurrent (MC) ratio in the range of 100-1000 is discussed for the first time. The area and speed of million-gate spin FPGAs are numerically benchmarked with CMOS FPGA for 22, 32, and 45 nm technologies including a 20 transistor size variation. We show that the area is reduced and the speed is increased in spin FPGA due to the nonvolatile memory function of spin MOSFET.
Original language | English |
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Article number | 07C312 |
Journal | Journal of Applied Physics |
Volume | 109 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1 Apr 2011 |
Externally published | Yes |