Room temperature observation of high spin polarization in post annealed Co₂FeSi/MgO/n+-Si on insulator devices

Physics

• Accumulations 20%
• Alloy 20%
• Annealing 40%
• Electric Potential 40%
• Field Effect Transistor 20%
• Increasing 20%
• Injection 20%
• Magnetoresistance 20%
• Magnitude 20%
• Room Temperature 100%
• Spin 100%
• Spin Polarization 100%
• Spintronics 20%
• Temperature 20%
• Temperature Dependence 20%

Engineering

• Alloy 25%
• Annealing Temperature 50%
• Bias Voltage 50%
• Enhancement 25%
• Increasing Spin 25%
• Injection Efficiency 25%
• Large Spin 25%
• Magnetoelectronics 25%
• Metal-Oxide-Semiconductor Field-Effect Transistor 25%
• Room Temperature 100%
• Surface 50%
• Temperature Dependence 25%