Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

Takao Marukame; Tomoaki Inokuchi; Mizue Ishikawa; Hideyuki Sugiyama; Yoshiaki Saito

doi:10.1109/IEDM.2009.5424385

Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

Takao Marukame, Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito

Toshiba Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Citations (Scopus)

Abstract

For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; "Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)" that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	9.2.1-9.2.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424385
Publication status	Published - 2009
Externally published	Yes
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 7 Dec 2009 → 9 Dec 2009

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	7/12/09 → 9/12/09

Access to Document

10.1109/IEDM.2009.5424385

Cite this

Marukame, T., Inokuchi, T., Ishikawa, M., Sugiyama, H., & Saito, Y. (2009). Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 9.2.1-9.2.4). Article 5424385 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424385

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title = "Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices",

abstract = "For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; {"}Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET){"} that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.",

author = "Takao Marukame and Tomoaki Inokuchi and Mizue Ishikawa and Hideyuki Sugiyama and Yoshiaki Saito",

year = "2009",

doi = "10.1109/IEDM.2009.5424385",

language = "English",

isbn = "9781424456406",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "9.2.1--9.2.4",

booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",

note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",

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Marukame, T, Inokuchi, T, Ishikawa, M, Sugiyama, H & Saito, Y 2009, Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424385, Technical Digest - International Electron Devices Meeting, IEDM, pp. 9.2.1-9.2.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 7/12/09. https://doi.org/10.1109/IEDM.2009.5424385

Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices. / Marukame, Takao; Inokuchi, Tomoaki; Ishikawa, Mizue et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 9.2.1-9.2.4 5424385 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Inokuchi, Tomoaki

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AU - Sugiyama, Hideyuki

AU - Saito, Yoshiaki

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AB - For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; "Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)" that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.

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Marukame T, Inokuchi T, Ishikawa M, Sugiyama H, Saito Y. Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 9.2.1-9.2.4. 5424385. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424385

Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

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