Pressure study of BiS 2-Based superconductors Bi 4O 4S 3 and La(O,F)BiS 2

Hisashi Kotegawa; Yusuke Tomita; Hideki Tou; Hiroki Izawa; Yoshikazu Mizuguchi; Osuke Miura; Satoshi Demura; Keita Deguchi; Yoshihiko Takano

doi:10.1143/JPSJ.81.103702

Pressure study of BiS ₂-Based superconductors Bi ₄O ₄S ₃ and La(O,F)BiS ₂

Hisashi Kotegawa, Yusuke Tomita, Hideki Tou, Hiroki Izawa, Yoshikazu Mizuguchi, Osuke Miura, Satoshi Demura, Keita Deguchi, Yoshihiko Takano

Research output: Contribution to journal › Article › peer-review

135 Citations (Scopus)

Abstract

We report the electrical resistivity measurements under pressure for the recently discovered BiS ₂-based layered superconductors Bi ₄O ₄S ₃ and La(O,F)BiS ₂. In Bi ₄O ₄S ₃, the transition temperature T _c decreases monotonically without a distinct change in the metallic behavior in the normal state. In La(O,F)BiS ₂, on the other hand, T _c initially increases with increasing pressure and then decreases above ̃1 GPa. The semiconducting behavior in the normal state is suppressed markedly and monotonically, whereas the evolution of T _c is nonlinear. The strong suppression of the semiconducting behavior without doping in La(O,F)BiS ₂ suggests that the Fermi surface is located in the vicinity of some instability. In the present study, we elucidate that the superconductivity in the BiS ₂ layer favors the Fermi surface at the boundary between the semiconducting and metallic behaviors.

Original language	English
Article number	103702
Journal	Journal of the Physical Society of Japan
Volume	81
Issue number	10
DOIs	https://doi.org/10.1143/JPSJ.81.103702
Publication status	Published - Oct 2012
Externally published	Yes

Keywords

Bi O S
La(OF)BiS
Pressure

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10.1143/JPSJ.81.103702

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title = "Pressure study of BiS 2-Based superconductors Bi 4O 4S 3 and La(O,F)BiS 2 ",

abstract = "We report the electrical resistivity measurements under pressure for the recently discovered BiS 2-based layered superconductors Bi 4O 4S 3 and La(O,F)BiS 2. In Bi 4O 4S 3, the transition temperature T c decreases monotonically without a distinct change in the metallic behavior in the normal state. In La(O,F)BiS 2, on the other hand, T c initially increases with increasing pressure and then decreases above{\~ }1 GPa. The semiconducting behavior in the normal state is suppressed markedly and monotonically, whereas the evolution of T c is nonlinear. The strong suppression of the semiconducting behavior without doping in La(O,F)BiS 2 suggests that the Fermi surface is located in the vicinity of some instability. In the present study, we elucidate that the superconductivity in the BiS 2 layer favors the Fermi surface at the boundary between the semiconducting and metallic behaviors.",

keywords = "Bi O S, La(OF)BiS, Pressure",

author = "Hisashi Kotegawa and Yusuke Tomita and Hideki Tou and Hiroki Izawa and Yoshikazu Mizuguchi and Osuke Miura and Satoshi Demura and Keita Deguchi and Yoshihiko Takano",

year = "2012",

month = oct,

doi = "10.1143/JPSJ.81.103702",

language = "English",

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T1 - Pressure study of BiS 2-Based superconductors Bi 4O 4S 3 and La(O,F)BiS 2

AU - Kotegawa, Hisashi

AU - Tomita, Yusuke

AU - Tou, Hideki

AU - Izawa, Hiroki

AU - Mizuguchi, Yoshikazu

AU - Miura, Osuke

AU - Demura, Satoshi

AU - Deguchi, Keita

AU - Takano, Yoshihiko

PY - 2012/10

Y1 - 2012/10

N2 - We report the electrical resistivity measurements under pressure for the recently discovered BiS 2-based layered superconductors Bi 4O 4S 3 and La(O,F)BiS 2. In Bi 4O 4S 3, the transition temperature T c decreases monotonically without a distinct change in the metallic behavior in the normal state. In La(O,F)BiS 2, on the other hand, T c initially increases with increasing pressure and then decreases above ̃1 GPa. The semiconducting behavior in the normal state is suppressed markedly and monotonically, whereas the evolution of T c is nonlinear. The strong suppression of the semiconducting behavior without doping in La(O,F)BiS 2 suggests that the Fermi surface is located in the vicinity of some instability. In the present study, we elucidate that the superconductivity in the BiS 2 layer favors the Fermi surface at the boundary between the semiconducting and metallic behaviors.

AB - We report the electrical resistivity measurements under pressure for the recently discovered BiS 2-based layered superconductors Bi 4O 4S 3 and La(O,F)BiS 2. In Bi 4O 4S 3, the transition temperature T c decreases monotonically without a distinct change in the metallic behavior in the normal state. In La(O,F)BiS 2, on the other hand, T c initially increases with increasing pressure and then decreases above ̃1 GPa. The semiconducting behavior in the normal state is suppressed markedly and monotonically, whereas the evolution of T c is nonlinear. The strong suppression of the semiconducting behavior without doping in La(O,F)BiS 2 suggests that the Fermi surface is located in the vicinity of some instability. In the present study, we elucidate that the superconductivity in the BiS 2 layer favors the Fermi surface at the boundary between the semiconducting and metallic behaviors.

KW - Bi O S

KW - La(OF)BiS

KW - Pressure

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M3 - Article

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SN - 0031-9015

VL - 81

JO - Journal of the Physical Society of Japan

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M1 - 103702

ER -

Pressure study of BiS ₂-Based superconductors Bi ₄O ₄S ₃ and La(O,F)BiS ₂

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Keywords

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