Lower-Temperature processing of potassium niobate films by microwave-Assisted hydrothermal deposition technique

Masaki Okura; Yoshiharu Ito; Takahisa Shiraishi; Takanori Kiguchi; Toyohiko J. Konno; Hiroshi Funakubo; Hiroshi Uchida

doi:10.2109/jcersj2.21115

Lower-Temperature processing of potassium niobate films by microwave-Assisted hydrothermal deposition technique

Masaki Okura, Yoshiharu Ito, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo, Hiroshi Uchida

College of Industrial Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Low-Temperature processing based on microwave-Assisted hydrothermal synthesis was proposed for deposition of piezoelectric oxoate KNbO3 films. The films were deposited on various substrates at reaction temperature below 200 °C using Nb2O5 powder and KOH solution. Epitaxial (100)c KNbO3 film with 1.3 m-Thick was deposited at a reaction temperature of 150 °C on (100)cSrRuO3//(100)SrTiO3 using 12 moldm 3 KOH solution for 80 min, which is significantly faster than conventional hydrothermal process.

Original language	English
Pages (from-to)	123-130
Number of pages	8
Journal	Journal of the Ceramic Society of Japan
Volume	130
Issue number	1
DOIs	https://doi.org/10.2109/jcersj2.21115
Publication status	Published - 1 Jan 2022

Keywords

Crystal growth
Crystal orientation
Dielectrics
Epitaxial growth
Ferroelectrics
Hydrothermal synthesis
Potassium niobate
Thin film

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10.2109/jcersj2.21115

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abstract = "Low-Temperature processing based on microwave-Assisted hydrothermal synthesis was proposed for deposition of piezoelectric oxoate KNbO3 films. The films were deposited on various substrates at reaction temperature below 200 °C using Nb2O5 powder and KOH solution. Epitaxial (100)c KNbO3 film with 1.3 m-Thick was deposited at a reaction temperature of 150 °C on (100)cSrRuO3//(100)SrTiO3 using 12 moldm 3 KOH solution for 80 min, which is significantly faster than conventional hydrothermal process.",

keywords = "Crystal growth, Crystal orientation, Dielectrics, Epitaxial growth, Ferroelectrics, Hydrothermal synthesis, Potassium niobate, Thin film",

author = "Masaki Okura and Yoshiharu Ito and Takahisa Shiraishi and Takanori Kiguchi and Konno, \{Toyohiko J.\} and Hiroshi Funakubo and Hiroshi Uchida",

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T1 - Lower-Temperature processing of potassium niobate films by microwave-Assisted hydrothermal deposition technique

AU - Okura, Masaki

AU - Ito, Yoshiharu

AU - Shiraishi, Takahisa

AU - Kiguchi, Takanori

AU - Konno, Toyohiko J.

AU - Funakubo, Hiroshi

AU - Uchida, Hiroshi

PY - 2022/1/1

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N2 - Low-Temperature processing based on microwave-Assisted hydrothermal synthesis was proposed for deposition of piezoelectric oxoate KNbO3 films. The films were deposited on various substrates at reaction temperature below 200 °C using Nb2O5 powder and KOH solution. Epitaxial (100)c KNbO3 film with 1.3 m-Thick was deposited at a reaction temperature of 150 °C on (100)cSrRuO3//(100)SrTiO3 using 12 moldm 3 KOH solution for 80 min, which is significantly faster than conventional hydrothermal process.

AB - Low-Temperature processing based on microwave-Assisted hydrothermal synthesis was proposed for deposition of piezoelectric oxoate KNbO3 films. The films were deposited on various substrates at reaction temperature below 200 °C using Nb2O5 powder and KOH solution. Epitaxial (100)c KNbO3 film with 1.3 m-Thick was deposited at a reaction temperature of 150 °C on (100)cSrRuO3//(100)SrTiO3 using 12 moldm 3 KOH solution for 80 min, which is significantly faster than conventional hydrothermal process.

KW - Crystal growth

KW - Crystal orientation

KW - Dielectrics

KW - Epitaxial growth

KW - Ferroelectrics

KW - Hydrothermal synthesis

KW - Potassium niobate

KW - Thin film

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DO - 10.2109/jcersj2.21115

M3 - Article

AN - SCOPUS:85122801884

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JO - Journal of the Ceramic Society of Japan

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IS - 1

ER -

Lower-Temperature processing of potassium niobate films by microwave-Assisted hydrothermal deposition technique

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Keywords

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