Abstract
Local magnetoresistance (MR) through silicon (Si) and its bias voltage (Vbias) (bias current (Ibias)) dependence in ferromagnet (FM)/MgO/silicon-on-insulator lateral spin valves are investigated. From the experimental measurements, we find that the local-MR through Si increases with increasing Vbias. This anomalous increase of local-MR as a function of Vbias can be understood by considering the standard drift-diffusion theory improved by taking into account the difference in the interface resistances and first order quantum effect between FM/MgO/Si (source) and Si/MgO/FM (drain) interfaces. The interface resistance dependence on experimentally obtained local-MR ratios also agrees with the improved standard spin diffusion theory. These results indicate that experimentally observed local-MR is certainly related to the spin signal through the Si bulk band.
Original language | English |
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Article number | 17C514 |
Journal | Journal of Applied Physics |
Volume | 115 |
Issue number | 17 |
DOIs | |
Publication status | Published - 7 May 2014 |
Externally published | Yes |