Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices

H. Sugiyama; M. Ishikawa; T. Inokuchi; T. Tanamoto; Y. Saito; N. Tezuka

doi:10.1016/j.ssc.2014.03.019

Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices

H. Sugiyama, M. Ishikawa, T. Inokuchi, T. Tanamoto, Y. Saito, N. Tezuka

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Spin-accumulation in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices is investigated and compared to that for CoFe/polycrystalline or (110)-textured MgO/Si devices. We find that magnesium (Mg) insertion between MgO and Si leads to highly (100)-textured MgO and epitaxial CoFe films. Interface resistance dependence on magnitude of spin-accumulation signal by the three-terminal Hanle measurement is quantitatively evaluated. Devices with highly (100)-textured MgO show larger magnitude of spin-accumulation signal in the low-interface-resistance region, than that with polycrystalline or (110)-textured MgO. These results indicate that magnitude of spin-accumulation signal depends on the crystallinity or the texture of ferromagnet/tunnel barrier layers on Si.

Original language	English
Pages (from-to)	49-52
Number of pages	4
Journal	Solid State Communications
Volume	190
DOIs	https://doi.org/10.1016/j.ssc.2014.03.019
Publication status	Published - Jul 2014
Externally published	Yes

Keywords

A. Ferromagnet
C. Spin MOSFET
D. Hanle effect
D. Spin-accumulation

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10.1016/j.ssc.2014.03.019

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title = "Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices",

abstract = "Spin-accumulation in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices is investigated and compared to that for CoFe/polycrystalline or (110)-textured MgO/Si devices. We find that magnesium (Mg) insertion between MgO and Si leads to highly (100)-textured MgO and epitaxial CoFe films. Interface resistance dependence on magnitude of spin-accumulation signal by the three-terminal Hanle measurement is quantitatively evaluated. Devices with highly (100)-textured MgO show larger magnitude of spin-accumulation signal in the low-interface-resistance region, than that with polycrystalline or (110)-textured MgO. These results indicate that magnitude of spin-accumulation signal depends on the crystallinity or the texture of ferromagnet/tunnel barrier layers on Si.",

keywords = "A. Ferromagnet, C. Spin MOSFET, D. Hanle effect, D. Spin-accumulation",

author = "H. Sugiyama and M. Ishikawa and T. Inokuchi and T. Tanamoto and Y. Saito and N. Tezuka",

year = "2014",

month = jul,

doi = "10.1016/j.ssc.2014.03.019",

language = "English",

volume = "190",

pages = "49--52",

journal = "Solid State Communications",

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TY - JOUR

T1 - Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices

AU - Sugiyama, H.

AU - Ishikawa, M.

AU - Inokuchi, T.

AU - Tanamoto, T.

AU - Saito, Y.

AU - Tezuka, N.

PY - 2014/7

Y1 - 2014/7

N2 - Spin-accumulation in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices is investigated and compared to that for CoFe/polycrystalline or (110)-textured MgO/Si devices. We find that magnesium (Mg) insertion between MgO and Si leads to highly (100)-textured MgO and epitaxial CoFe films. Interface resistance dependence on magnitude of spin-accumulation signal by the three-terminal Hanle measurement is quantitatively evaluated. Devices with highly (100)-textured MgO show larger magnitude of spin-accumulation signal in the low-interface-resistance region, than that with polycrystalline or (110)-textured MgO. These results indicate that magnitude of spin-accumulation signal depends on the crystallinity or the texture of ferromagnet/tunnel barrier layers on Si.

AB - Spin-accumulation in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices is investigated and compared to that for CoFe/polycrystalline or (110)-textured MgO/Si devices. We find that magnesium (Mg) insertion between MgO and Si leads to highly (100)-textured MgO and epitaxial CoFe films. Interface resistance dependence on magnitude of spin-accumulation signal by the three-terminal Hanle measurement is quantitatively evaluated. Devices with highly (100)-textured MgO show larger magnitude of spin-accumulation signal in the low-interface-resistance region, than that with polycrystalline or (110)-textured MgO. These results indicate that magnitude of spin-accumulation signal depends on the crystallinity or the texture of ferromagnet/tunnel barrier layers on Si.

KW - A. Ferromagnet

KW - C. Spin MOSFET

KW - D. Hanle effect

KW - D. Spin-accumulation

UR - http://www.scopus.com/inward/record.url?scp=84901841983&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2014.03.019

DO - 10.1016/j.ssc.2014.03.019

M3 - Article

AN - SCOPUS:84901841983

SN - 0038-1098

VL - 190

SP - 49

EP - 52

JO - Solid State Communications

JF - Solid State Communications

ER -

Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices

Abstract

Keywords

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