Incorporation Site and Valence State of Sn Atoms in Sn-Substituted La(O,F)BiS2 Superconductor

Ya Jun Li; Ze Xu Sun; Noriyuki Kataoka; Taro Setoguchi; Yusuke Hashimoto; Soichiro Takeuchi; Shunjo Koga; Takayuki Muro; Satoshi Demura; Kanako Noguchi; Hideaki Sakata; Tomohiro Matsushita; Ikuto Kawasaki; Shin Ichi Fujimori; Takanori Wakita; Yuji Muraoka; Takayoshi Yokoya

doi:10.7566/JPSJ.91.054602

Incorporation Site and Valence State of Sn Atoms in Sn-Substituted La(O,F)BiS₂ Superconductor

Ya Jun Li, Ze Xu Sun, Noriyuki Kataoka, Taro Setoguchi, Yusuke Hashimoto, Soichiro Takeuchi, Shunjo Koga, Takayuki Muro, Satoshi Demura, Kanako Noguchi, Hideaki Sakata, Tomohiro Matsushita, Ikuto Kawasaki, Shin Ichi Fujimori, Takanori Wakita, Yuji Muraoka, Takayoshi Yokoya

College of Science and Technology

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

BiS₂-based superconductors have attracted considerable attention owing to the possible occurrence of exotic superconductivity. Recently, the superconducting critical temperature (T_c) of La(O,F)BiS₂ has been reported to be enhanced with Pb or Sn doping. In this study, we have performed photoelectron holography (PEH) and core-level photoelectron spectroscopy (PES) to clarify the substituted site and valence state of Sn atoms in Sn-substituted La(O,F)BiS₂. The PEH study revealed that the Sn atoms are incorporated into the Bi sites. A core-level PES study suggested that the valence state of the substituted Sn atoms is close to that of Sn²⁺, indicating that the Sn dopants provide hole carriers that compensate the electron carriers introduced by the F doping. These results are fundamental information for understanding the impact of Sn doping on this compound.

Original language	English
Article number	054602
Journal	Journal of the Physical Society of Japan
Volume	91
Issue number	5
DOIs	https://doi.org/10.7566/JPSJ.91.054602
Publication status	Published - 15 May 2022

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Li, Y. J., Sun, Z. X., Kataoka, N., Setoguchi, T., Hashimoto, Y., Takeuchi, S., Koga, S., Muro, T., Demura, S., Noguchi, K., Sakata, H., Matsushita, T., Kawasaki, I., Fujimori, S. I., Wakita, T., Muraoka, Y., & Yokoya, T. (2022). Incorporation Site and Valence State of Sn Atoms in Sn-Substituted La(O,F)BiS₂ Superconductor. Journal of the Physical Society of Japan, 91(5), Article 054602. https://doi.org/10.7566/JPSJ.91.054602

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title = "Incorporation Site and Valence State of Sn Atoms in Sn-Substituted La(O,F)BiS2 Superconductor",

abstract = "BiS2-based superconductors have attracted considerable attention owing to the possible occurrence of exotic superconductivity. Recently, the superconducting critical temperature (Tc) of La(O,F)BiS2 has been reported to be enhanced with Pb or Sn doping. In this study, we have performed photoelectron holography (PEH) and core-level photoelectron spectroscopy (PES) to clarify the substituted site and valence state of Sn atoms in Sn-substituted La(O,F)BiS2. The PEH study revealed that the Sn atoms are incorporated into the Bi sites. A core-level PES study suggested that the valence state of the substituted Sn atoms is close to that of Sn2+, indicating that the Sn dopants provide hole carriers that compensate the electron carriers introduced by the F doping. These results are fundamental information for understanding the impact of Sn doping on this compound.",

author = "Li, {Ya Jun} and Sun, {Ze Xu} and Noriyuki Kataoka and Taro Setoguchi and Yusuke Hashimoto and Soichiro Takeuchi and Shunjo Koga and Takayuki Muro and Satoshi Demura and Kanako Noguchi and Hideaki Sakata and Tomohiro Matsushita and Ikuto Kawasaki and Fujimori, {Shin Ichi} and Takanori Wakita and Yuji Muraoka and Takayoshi Yokoya",

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year = "2022",

month = may,

day = "15",

doi = "10.7566/JPSJ.91.054602",

language = "English",

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Li, YJ, Sun, ZX, Kataoka, N, Setoguchi, T, Hashimoto, Y, Takeuchi, S, Koga, S, Muro, T, Demura, S, Noguchi, K, Sakata, H, Matsushita, T, Kawasaki, I, Fujimori, SI, Wakita, T, Muraoka, Y & Yokoya, T 2022, 'Incorporation Site and Valence State of Sn Atoms in Sn-Substituted La(O,F)BiS₂ Superconductor', Journal of the Physical Society of Japan, vol. 91, no. 5, 054602. https://doi.org/10.7566/JPSJ.91.054602

TY - JOUR

T1 - Incorporation Site and Valence State of Sn Atoms in Sn-Substituted La(O,F)BiS2 Superconductor

AU - Li, Ya Jun

AU - Sun, Ze Xu

AU - Kataoka, Noriyuki

AU - Setoguchi, Taro

AU - Hashimoto, Yusuke

AU - Takeuchi, Soichiro

AU - Koga, Shunjo

AU - Muro, Takayuki

AU - Demura, Satoshi

AU - Noguchi, Kanako

AU - Sakata, Hideaki

AU - Matsushita, Tomohiro

AU - Kawasaki, Ikuto

AU - Fujimori, Shin Ichi

AU - Wakita, Takanori

AU - Muraoka, Yuji

AU - Yokoya, Takayoshi

PY - 2022/5/15

Y1 - 2022/5/15

N2 - BiS2-based superconductors have attracted considerable attention owing to the possible occurrence of exotic superconductivity. Recently, the superconducting critical temperature (Tc) of La(O,F)BiS2 has been reported to be enhanced with Pb or Sn doping. In this study, we have performed photoelectron holography (PEH) and core-level photoelectron spectroscopy (PES) to clarify the substituted site and valence state of Sn atoms in Sn-substituted La(O,F)BiS2. The PEH study revealed that the Sn atoms are incorporated into the Bi sites. A core-level PES study suggested that the valence state of the substituted Sn atoms is close to that of Sn2+, indicating that the Sn dopants provide hole carriers that compensate the electron carriers introduced by the F doping. These results are fundamental information for understanding the impact of Sn doping on this compound.

AB - BiS2-based superconductors have attracted considerable attention owing to the possible occurrence of exotic superconductivity. Recently, the superconducting critical temperature (Tc) of La(O,F)BiS2 has been reported to be enhanced with Pb or Sn doping. In this study, we have performed photoelectron holography (PEH) and core-level photoelectron spectroscopy (PES) to clarify the substituted site and valence state of Sn atoms in Sn-substituted La(O,F)BiS2. The PEH study revealed that the Sn atoms are incorporated into the Bi sites. A core-level PES study suggested that the valence state of the substituted Sn atoms is close to that of Sn2+, indicating that the Sn dopants provide hole carriers that compensate the electron carriers introduced by the F doping. These results are fundamental information for understanding the impact of Sn doping on this compound.

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JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

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ER -

Incorporation Site and Valence State of Sn Atoms in Sn-Substituted La(O,F)BiS₂ Superconductor

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