Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

T. Inokuchi, H. Yoda, Y. Kato, M. Shimizu, S. Shirotori, N. Shimomura, K. Koi, Y. Kamiguchi, H. Sugiyama, S. Oikawa, K. Ikegami, M. Ishikawa, B. Altansargai, A. Tiwari, Y. Ohsawa, Y. Saito, A. Kurobe

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36 Citations (Scopus)

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