Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

T. Inokuchi; H. Yoda; Y. Kato; M. Shimizu; S. Shirotori; N. Shimomura; K. Koi; Y. Kamiguchi; H. Sugiyama; S. Oikawa; K. Ikegami; M. Ishikawa; B. Altansargai; A. Tiwari; Y. Ohsawa; Y. Saito; A. Kurobe

doi:10.1063/1.4986923

Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

T. Inokuchi, H. Yoda, Y. Kato, M. Shimizu, S. Shirotori, N. Shimomura, K. Koi, Y. Kamiguchi, H. Sugiyama, S. Oikawa, K. Ikegami, M. Ishikawa, B. Altansargai, A. Tiwari, Y. Ohsawa, Y. Saito, A. Kurobe

Toshiba Corporation

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from -1.0 V to +1.0 V. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m² to 1.6 mJ/m², which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 10⁸ cycles by controlling read and write sequences.

Original language	English
Article number	252404
Journal	Applied Physics Letters
Volume	110
Issue number	25
DOIs	https://doi.org/10.1063/1.4986923
Publication status	Published - 19 Jun 2017
Externally published	Yes

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Inokuchi, T., Yoda, H., Kato, Y., Shimizu, M., Shirotori, S., Shimomura, N., Koi, K., Kamiguchi, Y., Sugiyama, H., Oikawa, S., Ikegami, K., Ishikawa, M., Altansargai, B., Tiwari, A., Ohsawa, Y., Saito, Y., & Kurobe, A. (2017). Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height. Applied Physics Letters, 110(25), Article 252404. https://doi.org/10.1063/1.4986923

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title = "Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height",

abstract = "A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from -1.0 V to +1.0 V. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m2 to 1.6 mJ/m2, which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 108 cycles by controlling read and write sequences.",

author = "T. Inokuchi and H. Yoda and Y. Kato and M. Shimizu and S. Shirotori and N. Shimomura and K. Koi and Y. Kamiguchi and H. Sugiyama and S. Oikawa and K. Ikegami and M. Ishikawa and B. Altansargai and A. Tiwari and Y. Ohsawa and Y. Saito and A. Kurobe",

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year = "2017",

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doi = "10.1063/1.4986923",

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volume = "110",

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Inokuchi, T, Yoda, H, Kato, Y, Shimizu, M, Shirotori, S, Shimomura, N, Koi, K, Kamiguchi, Y, Sugiyama, H, Oikawa, S, Ikegami, K, Ishikawa, M, Altansargai, B, Tiwari, A, Ohsawa, Y, Saito, Y & Kurobe, A 2017, 'Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height', Applied Physics Letters, vol. 110, no. 25, 252404. https://doi.org/10.1063/1.4986923

TY - JOUR

T1 - Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

AU - Inokuchi, T.

AU - Yoda, H.

AU - Kato, Y.

AU - Shimizu, M.

AU - Shirotori, S.

AU - Shimomura, N.

AU - Koi, K.

AU - Kamiguchi, Y.

AU - Sugiyama, H.

AU - Oikawa, S.

AU - Ikegami, K.

AU - Ishikawa, M.

AU - Altansargai, B.

AU - Tiwari, A.

AU - Ohsawa, Y.

AU - Saito, Y.

AU - Kurobe, A.

PY - 2017/6/19

Y1 - 2017/6/19

N2 - A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from -1.0 V to +1.0 V. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m2 to 1.6 mJ/m2, which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 108 cycles by controlling read and write sequences.

AB - A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from -1.0 V to +1.0 V. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m2 to 1.6 mJ/m2, which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 108 cycles by controlling read and write sequences.

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U2 - 10.1063/1.4986923

DO - 10.1063/1.4986923

M3 - Article

AN - SCOPUS:85021078584

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252404

ER -

Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

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