High-Speed Voltage Control Spintronics Memory (VoCSM) Having Broad Design Windows

Naoharu Shimomura, Hiroaki Yoda, Tomoaki Inokuchi, Katsuhiko Koi, Hideyuki Sugiyama, Yushi Kato, Yuichi Ohsawa, Altansargai Buyandalai, Satoshi Shirotori, Soichi Oikawa, Mariko Shimizu, Mizue Ishikawa, Tiwari Ajay, Atsushi Kurobe

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

Voltage Control Spintronics Memory (VoCSM) is a magnetic memory combining the spin Hall effect and Voltage Controlled Magnetic Anisotropy (VCMA). It has the potential to make MRAM work faster. In this paper, we described memory design of a write window and a read window of high-speed VoCSM from experimental data. The design windows of both writing and reading are large enough for gigabit memory.

Original languageEnglish
Title of host publication2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages83-84
Number of pages2
ISBN (Electronic)9781538667002
DOIs
Publication statusPublished - 22 Oct 2018
Externally publishedYes
Event32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018 - Honolulu, United States
Duration: 18 Jun 201822 Jun 2018

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers
Volume2018-June

Conference

Conference32nd IEEE Symposium on VLSI Circuits, VLSI Circuits 2018
Country/TerritoryUnited States
CityHonolulu
Period18/06/1822/06/18

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