@inproceedings{35fefcfe29b04196920db1820bdf412a,
title = "High-speed voltage-control spintronics memory (High-Speed VoCSM)",
abstract = "We propose a new spintronics-based memory architecture with 2 MTJs and 4 transistors as a unit cell for high-speed application. The architecture employs spin-Hall effect as a writing principle and voltage-control-magneticanisotropy (VCMA) effect as a write speed acceleration. We successfully demonstrated the unique complementary flashwriting scheme and proved a potential of ultrahigh speed writing with the prototype unit-cell and the test-element.",
author = "H. Yoda and H. Sugiyama and T. Inokuchi and Y. Kato and Y. Ohsawa and K. Abe and N. Shimomura and Y. Saito and S. Shirotori and K. Koi and B. Altansargai and S. Oikawa and M. Shimizu and M. Ishikawa and K. Ikegami and Y. Kamiguchi and S. Fujita and A. Kurobe",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 9th IEEE International Memory Workshop, IMW 2017 ; Conference date: 14-05-2017 Through 17-05-2017",
year = "2017",
month = jun,
day = "5",
doi = "10.1109/IMW.2017.7939085",
language = "English",
series = "2017 IEEE 9th International Memory Workshop, IMW 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2017 IEEE 9th International Memory Workshop, IMW 2017",
}