High-speed voltage-control spintronics memory (High-Speed VoCSM)

H. Yoda, H. Sugiyama, T. Inokuchi, Y. Kato, Y. Ohsawa, K. Abe, N. Shimomura, Y. Saito, S. Shirotori, K. Koi, B. Altansargai, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, Y. Kamiguchi, S. Fujita, A. Kurobe

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Citations (Scopus)


We propose a new spintronics-based memory architecture with 2 MTJs and 4 transistors as a unit cell for high-speed application. The architecture employs spin-Hall effect as a writing principle and voltage-control-magneticanisotropy (VCMA) effect as a write speed acceleration. We successfully demonstrated the unique complementary flashwriting scheme and proved a potential of ultrahigh speed writing with the prototype unit-cell and the test-element.

Original languageEnglish
Title of host publication2017 IEEE 9th International Memory Workshop, IMW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509032723
Publication statusPublished - 5 Jun 2017
Externally publishedYes
Event9th IEEE International Memory Workshop, IMW 2017 - Monterey, United States
Duration: 14 May 201717 May 2017

Publication series

Name2017 IEEE 9th International Memory Workshop, IMW 2017


Conference9th IEEE International Memory Workshop, IMW 2017
Country/TerritoryUnited States


Dive into the research topics of 'High-speed voltage-control spintronics memory (High-Speed VoCSM)'. Together they form a unique fingerprint.

Cite this