Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system

Yushi Kato, Hiroaki Yoda, Yoshiaki Saito, Soichi Oikawa, Keiko Fujii, Masahiko Yoshiki, Katsuhiko Koi, Hideyuki Sugiyama, Mizue Ishikawa, Tomoaki Inokuchi, Naoharu Shimomura, Mariko Shimizu, Satoshi Shirotori, Buyandalai Altansargai, Yuichi Ohsawa, Kazutaka Ikegami, Ajay Tiwari, Atsushi Kurobe

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33 Citations (Scopus)

Abstract

We experimentally demonstrate a giant voltage-controlled magnetic anisotropy (VCMA) coefficient in a crystallographically strained CoFe layer (>15 monolayers in thickness) in a MgO/CoFe/Ir system. We observed a strong applied voltage dependence of saturation field and an asymmetric concave behavior with giant VCMA coefficients of %758 and 1043 fJ V%1 m%1. The result of structural analysis reveals epitaxial growth in MgO/ CoFe/Ir layers and the orientation relationship MgO(001)[110] k CoFe(001)[100] k Ir(001)[110]. The CoFe layer has a bcc structure and a tetragonal distortion due to the lattice mismatch; therefore, the CoFe layer has a large perpendicular magnetic anisotropy.

Original languageEnglish
Article number053007
JournalApplied Physics Express
Volume11
Issue number5
DOIs
Publication statusPublished - May 2018
Externally publishedYes

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