From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption

We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (I _csw ) smaller than 50 µA at 20 nsec. for designed MTJ size of about 50 × 150 nm ² . The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of I _csw further reduction of I _csw is estimated to clarify that VoCSM has a potential to reduce I _csw down to several µA.