From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption

H. Yoda, Y. Ohsawa, Y. Kato, N. Shimomura, M. Shimizu, K. Koi, S. Shirotori, T. Inokuchi, H. Sugiyama, S. Oikawa, B. Altansargai, M. Ishikawa, A. Kurobe

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4 Citations (Scopus)

Abstract

We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (I csw ) smaller than 50 µA at 20 nsec. for designed MTJ size of about 50 × 150 nm 2 . The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of I csw further reduction of I csw is estimated to clarify that VoCSM has a potential to reduce I csw down to several µA.

Original languageEnglish
Pages (from-to)107-111
Number of pages5
JournalJournal of Magnetics
Volume24
Issue number1
DOIs
Publication statusPublished - 2019
Externally publishedYes

Keywords

  • MRAM
  • Spin Hall
  • Spintronics
  • Voltage-control magnetic anisotropy
  • Voltage-control spintronics memory

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