From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption

H. Yoda; Y. Ohsawa; Y. Kato; N. Shimomura; M. Shimizu; K. Koi; S. Shirotori; T. Inokuchi; H. Sugiyama; S. Oikawa; B. Altansargai; M. Ishikawa; A. Kurobe

doi:10.4283/JMAG.2019.24.1.107

From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption

H. Yoda, Y. Ohsawa, Y. Kato, N. Shimomura, M. Shimizu, K. Koi, S. Shirotori, T. Inokuchi, H. Sugiyama, S. Oikawa, B. Altansargai, M. Ishikawa, A. Kurobe

Toshiba Corporation

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (I _csw ) smaller than 50 µA at 20 nsec. for designed MTJ size of about 50 × 150 nm ² . The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of I _csw further reduction of I _csw is estimated to clarify that VoCSM has a potential to reduce I _csw down to several µA.

Original language	English
Pages (from-to)	107-111
Number of pages	5
Journal	Journal of Magnetics
Volume	24
Issue number	1
DOIs	https://doi.org/10.4283/JMAG.2019.24.1.107
Publication status	Published - 2019
Externally published	Yes

Keywords

MRAM
Spin Hall
Spintronics
Voltage-control magnetic anisotropy
Voltage-control spintronics memory

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.4283/JMAG.2019.24.1.107

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Yoda, H., Ohsawa, Y., Kato, Y., Shimomura, N., Shimizu, M., Koi, K., Shirotori, S., Inokuchi, T., Sugiyama, H., Oikawa, S., Altansargai, B., Ishikawa, M., & Kurobe, A. (2019). From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption. Journal of Magnetics, 24(1), 107-111. https://doi.org/10.4283/JMAG.2019.24.1.107

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title = "From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption",

abstract = " We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (I csw ) smaller than 50 µA at 20 nsec. for designed MTJ size of about 50 × 150 nm 2 . The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of I csw further reduction of I csw is estimated to clarify that VoCSM has a potential to reduce I csw down to several µA.",

keywords = "MRAM, Spin Hall, Spintronics, Voltage-control magnetic anisotropy, Voltage-control spintronics memory",

author = "H. Yoda and Y. Ohsawa and Y. Kato and N. Shimomura and M. Shimizu and K. Koi and S. Shirotori and T. Inokuchi and H. Sugiyama and S. Oikawa and B. Altansargai and M. Ishikawa and A. Kurobe",

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doi = "10.4283/JMAG.2019.24.1.107",

language = "English",

volume = "24",

pages = "107--111",

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Yoda, H, Ohsawa, Y, Kato, Y, Shimomura, N, Shimizu, M, Koi, K, Shirotori, S, Inokuchi, T, Sugiyama, H, Oikawa, S, Altansargai, B, Ishikawa, M & Kurobe, A 2019, 'From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption', Journal of Magnetics, vol. 24, no. 1, pp. 107-111. https://doi.org/10.4283/JMAG.2019.24.1.107

TY - JOUR

T1 - From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption

AU - Yoda, H.

AU - Ohsawa, Y.

AU - Kato, Y.

AU - Shimomura, N.

AU - Shimizu, M.

AU - Koi, K.

AU - Shirotori, S.

AU - Inokuchi, T.

AU - Sugiyama, H.

AU - Oikawa, S.

AU - Altansargai, B.

AU - Ishikawa, M.

AU - Kurobe, A.

PY - 2019

Y1 - 2019

N2 - We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (I csw ) smaller than 50 µA at 20 nsec. for designed MTJ size of about 50 × 150 nm 2 . The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of I csw further reduction of I csw is estimated to clarify that VoCSM has a potential to reduce I csw down to several µA.

AB - We designed a voltage-control spintronics memory unit-cell, VoCSM, with high write-efficiency to prove a potential to reduce writing energy per bit. By optimizing a self-aligned structure, the cell has the critical switching current (I csw ) smaller than 50 µA at 20 nsec. for designed MTJ size of about 50 × 150 nm 2 . The value is much smaller than that for mature STT-MRAM with the similar dimension. VoCSM also was proved to have unlimited endurance. Finally, with an empirical equation of I csw further reduction of I csw is estimated to clarify that VoCSM has a potential to reduce I csw down to several µA.

KW - MRAM

KW - Spin Hall

KW - Spintronics

KW - Voltage-control magnetic anisotropy

KW - Voltage-control spintronics memory

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U2 - 10.4283/JMAG.2019.24.1.107

DO - 10.4283/JMAG.2019.24.1.107

M3 - Article

AN - SCOPUS:85065026816

SN - 1226-1750

VL - 24

SP - 107

EP - 111

JO - Journal of Magnetics

JF - Journal of Magnetics

IS - 1

ER -

From STT-MRAM to voltage-control spintronics memory (VoCSM) in pursuit of memory systems with lower energy consumption

Abstract

Keywords

UN SDGs

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