Evaluation of Bi defect concentration in LnO1-xFxBiCh2 by scanning tunneling microscopy

S. Demura, N. Ishida, Y. Fujisawa, H. Sakata

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


We examined a concentration of Bi defects in layered BiCh2 based superconductors LnO1-xFxBiCh2 (Ln = La, Ce, Nd Ch = S, Se). These materials show superconductivity by electron carrier doping into BiCh2 layer. Since Bi defects affect the carrier concentration directly, an examination of the concentration is important to evaluate an actual carrier concentration. In this paper, the concentration of Bi defects on the BiCh2 layers in BiCh2 based superconductors was evaluated by scanning tunneling microscopy measurements in real space. We found the samples with BiSe2 layers have less Bi defects than those with BiS2 layers. Furthermore, the concentration of Bi defects was found to be almost constant regardless of F concentration and Ln ion.

Original languageEnglish
Article number012006
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 26 Jul 2017
Externally publishedYes
Event29th International Symposium on Superconductivity, ISS 2016 - Tokyo, Japan
Duration: 13 Dec 201615 Dec 2016


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