Erratum: Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor (Journal of Applied Physics (2011) 109 (07C312))

Tetsufumi Tanamoto; Hideyuki Sugiyama; Tomoaki Inokuchi; Takao Marukame; Mizue Ishikawa; Kazutaka Ikegami; Yoshiaki Saito

doi:10.1063/1.3633243

Erratum: Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor (Journal of Applied Physics (2011) 109 (07C312))

Tetsufumi Tanamoto, Hideyuki Sugiyama, Tomoaki Inokuchi, Takao Marukame, Mizue Ishikawa, Kazutaka Ikegami, Yoshiaki Saito

Toshiba Corporation

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	059906
Journal	Journal of Applied Physics
Volume	110
Issue number	5
DOIs	https://doi.org/10.1063/1.3633243
Publication status	Published - 1 Sept 2011
Externally published	Yes

Access to Document

10.1063/1.3633243

Cite this

Tanamoto, T., Sugiyama, H., Inokuchi, T., Marukame, T., Ishikawa, M., Ikegami, K., & Saito, Y. (2011). Erratum: Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor (Journal of Applied Physics (2011) 109 (07C312)). Journal of Applied Physics, 110(5), Article 059906. https://doi.org/10.1063/1.3633243

@article{6f482f30b7674a6e9e550ad7d1382be1,

title = "Erratum: Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor (Journal of Applied Physics (2011) 109 (07C312))",

author = "Tetsufumi Tanamoto and Hideyuki Sugiyama and Tomoaki Inokuchi and Takao Marukame and Mizue Ishikawa and Kazutaka Ikegami and Yoshiaki Saito",

year = "2011",

month = sep,

day = "1",

doi = "10.1063/1.3633243",

language = "English",

volume = "110",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

}

Tanamoto, T, Sugiyama, H, Inokuchi, T, Marukame, T, Ishikawa, M, Ikegami, K & Saito, Y 2011, 'Erratum: Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor (Journal of Applied Physics (2011) 109 (07C312))', Journal of Applied Physics, vol. 110, no. 5, 059906. https://doi.org/10.1063/1.3633243

Erratum: Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor (Journal of Applied Physics (2011) 109 (07C312)). / Tanamoto, Tetsufumi; Sugiyama, Hideyuki; Inokuchi, Tomoaki et al.
In: Journal of Applied Physics, Vol. 110, No. 5, 059906, 01.09.2011.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor (Journal of Applied Physics (2011) 109 (07C312))

AU - Tanamoto, Tetsufumi

AU - Sugiyama, Hideyuki

AU - Inokuchi, Tomoaki

AU - Marukame, Takao

AU - Ishikawa, Mizue

AU - Ikegami, Kazutaka

AU - Saito, Yoshiaki

PY - 2011/9/1

Y1 - 2011/9/1

UR - https://www.scopus.com/pages/publications/80052922094

U2 - 10.1063/1.3633243

DO - 10.1063/1.3633243

M3 - Comment/debate

AN - SCOPUS:80052922094

SN - 0021-8979

VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 059906

ER -

Erratum: Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor (Journal of Applied Physics (2011) 109 (07C312))

Access to Document

Other files and links

Cite this