Abstract
We show direct evidence for importance of the interface resistance to electrically create large spin accumulation in silicon (Si). With increasing the thickness of the tunnel barrier in CoFe/MgO/n +-Si devices, a marked enhancement of spin accumulation signals can be observed in the electrical Hanle-effect measurements. To demonstrate room-temperature detection of the spin signals in three-terminal methods, the influence of the spin absorption from Si into CoFe through a tunnel barrier should be taken into account.
Original language | English |
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Article number | 252404 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 25 |
DOIs | |
Publication status | Published - 18 Jun 2012 |
Externally published | Yes |