Determination of local atomic displacements in CeO1-xFxBiS2 system

E. Paris, B. Joseph, A. Iadecola, T. Sugimoto, L. Olivi, S. Demura, Y. Mizuguchi, Y. Takano, T. Mizokawa, N. L. Saini

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45 Citations (Scopus)


We have used Bi and Ce L 3-edges extended x-ray absorption fine structure measurements to study local structure of CeO1-xFxBiS2 system as a function of F-substitution. The local structure of both BiS2 active layer and CeO1-xFx spacer layer changes systematically. The in-plane Bi-S1 distance decreases (ΔRmax∼0.08) and the out-of-plane Bi-S2 distance increases (ΔRmax∼0.12) with increasing F-content. On the other hand, the Ce-O/F distance increases (ΔRmax∼0.2) with a concomitant decrease of the Ce-S2 distance (ΔRmax∼0.15). Interestingly, the Bi-S1 distance is characterized by a large disorder that increases with F-content. The results provide useful information on the local atomic displacements in CeO1-xFxBiS2, that should be important for the understanding of the coexistence of superconductivity and low temperature ferromagnetism in this system.

Original languageEnglish
Article number435701
JournalJournal of Physics Condensed Matter
Issue number43
Publication statusPublished - 29 Oct 2014
Externally publishedYes


  • BiS2 based superconductors
  • coexisting superconductivity and ferromagnetism
  • layered structures
  • nanoscale structure


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