Ce 4f electronic states of CeO1-x FxBiS2 studied by soft x-ray photoemission spectroscopy

Takanori Wakita, Kensei Terashima, Takahiro Hamada, Hirokazu Fujiwara, Makoto Minohara, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira, Galif Kutluk, Masanori Nagao, Satoshi Watauchi, Isao Tanaka, Satoshi Demura, Hiroyuki Okazaki, Yoshihiko Takano, Yoshikazu Mizuguchi, Osuke Miura, Kozo Okada, Yuji Muraoka, Takayoshi Yokoya

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We use soft x-ray photoemission spectroscopy (SXPES) to investigate Ce 4f electronic states of a new BiS2 layered superconductor CeO1-xFxBiS2, for polycrystalline and single-crystal samples. The Ce 3d spectrum of the single crystal of nominal composition x=0.7 has no f0 component and the spectral shape closely resembles the ones observed for Ce trivalent insulating compounds, strongly implying that the CeO layer is still in an insulating state even after the F doping. The Ce 3d-4f resonant SXPES for both polycrystalline and single-crystal samples shows that the prominent peak is located around 1 eV below the Fermi level (EF) with negligible spectral intensity at EF. The F-concentration dependence of the valence band spectra for single crystals shows the increases of the degeneracy in energy levels and of the interaction between Ce 4f and S 3p states. These results give insight into the nature of the CeO1-xFx layer and the microscopic coexistence of magnetism and superconductivity in CeO1-xFxBiS2.

Original languageEnglish
Article number085109
JournalPhysical Review B
Issue number8
Publication statusPublished - 7 Feb 2017
Externally publishedYes


Dive into the research topics of 'Ce 4f electronic states of CeO1-x FxBiS2 studied by soft x-ray photoemission spectroscopy'. Together they form a unique fingerprint.

Cite this