Abstract
We have investigated the impact of F-doing on CeO1-xFxBiS2 in terms of the electronic-structural parameters of Anderson's impurity-model analysis. It was recently reported using Ce L3-edge x-ray absorption spectroscopy (XAS) that CeOBiS2 falls in the Ce valence fluctuation regime and the F-doping drives the system into the Kondo regime. The Ce L3- edge XAS spectra with the various F-doping levels can be reproduced by adjusting the transfer integral in the Anderson's impurity model. The present analysis indicates that the F-doping to the system corresponds to the decrease of the Ce-Bi transfer integral.
Original language | English |
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Article number | 012073 |
Journal | Journal of Physics: Conference Series |
Volume | 592 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2014 |
Externally published | Yes |
Event | 2014 International Conference on Strongly Correlated Electron Systems, SCES 2014 - Grenoble, France Duration: 7 Jul 2014 → 14 Jul 2014 |