Research output per year
Research output per year
- 10 results
Search results
-
2018
High-Speed Voltage Control Spintronics Memory (VoCSM) Having Broad Design Windows
Shimomura, N., Yoda, H., Inokuchi, T., Koi, K., Sugiyama, H., Kato, Y., Ohsawa, Y., Buyandalai, A., Shirotori, S., Oikawa, S., Shimizu, M., Ishikawa, M., Ajay, T. & Kurobe, A., 22 Oct 2018, 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018. Institute of Electrical and Electronics Engineers Inc., p. 83-84 2 p. 8502420. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; vol. 2018-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1 Citation (Scopus) -
The pursuit of saving energy consumption of memory systems by MRAMs, from STT-MRAM to voltage-control spintronics memory (VOCSM)
Yoda, H., Shimomura, N., Ohsawa, Y., Kato, Y., Shirotori, S., Shimizu, M., Koi, K., Inokuchi, T., Sugiyama, H., Oikawa, S., Altansargai, B., Ishikawa, M., Tiwari, A. & Kurobe, A., 24 Oct 2018, 2018 IEEE International Magnetic Conference, INTERMAG 2018. Institute of Electrical and Electronics Engineers Inc., 8508840. (2018 IEEE International Magnetic Conference, INTERMAG 2018).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1 Citation (Scopus) -
Ultra-high-efficient Writing in Voltage-Control Spintronics Memory(VoCSM); The Most Promising Embedded Memory for Deep Learning
Ohsawa, Y., Yoda, H., Shimomura, N., Shirotori, S., Fujita, S., Koi, K., Altansargai, B., Oikawa, S., Shimizu, M., Kato, Y., Inokuchi, T., Sugiyama, H., Ishikawa, M., Ajay, T., Ikegami, K., Takaya, S. & Kurobe, A., 26 Jul 2018, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 214-216 3 p. 8421494. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
3 Citations (Scopus) -
2017
High-speed voltage-control spintronics memory (High-Speed VoCSM)
Yoda, H., Sugiyama, H., Inokuchi, T., Kato, Y., Ohsawa, Y., Abe, K., Shimomura, N., Saito, Y., Shirotori, S., Koi, K., Altansargai, B., Oikawa, S., Shimizu, M., Ishikawa, M., Ikegami, K., Kamiguchi, Y., Fujita, S. & Kurobe, A., 5 Jun 2017, 2017 IEEE 9th International Memory Workshop, IMW 2017. Institute of Electrical and Electronics Engineers Inc., 7939085. (2017 IEEE 9th International Memory Workshop, IMW 2017).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
12 Citations (Scopus) -
High-speed voltage-control spintronics memory focused on reduction in write current
Sugiyama, H., Yoda, H., Koi, K., Oikawa, S., Altansargai, B., Inokuchi, T., Shirotori, S., Shimizu, M., Kato, Y., Ohsawa, Y., Ishikawa, M., Tiwari, A., Shimomura, N., Saito, Y. & Kurobe, A., 8 Dec 2017, 2017 17th Non-Volatile Memory Technology Symposium, NVMTS 2017 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 1-5 5 p. (2017 17th Non-Volatile Memory Technology Symposium, NVMTS 2017 - Conference Proceedings; vol. 2017-December).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density
Yoda, H., Shimomura, N., Ohsawa, Y., Shirotori, S., Kato, Y., Inokuchi, T., Kamiguchi, Y., Altansargai, B., Saito, Y., Koi, K., Sugiyama, H., Oikawa, S., Shimizu, M., Ishikawa, M., Ikegami, K. & Kurobe, A., 31 Jan 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 27.6.1-27.6.4 7838495. (Technical Digest - International Electron Devices Meeting, IEDM).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
27 Citations (Scopus) -
2015
Dependence of spin-dependent transport signals on measurement frequency in CoFe/MgO/ n+-Si junctions
Inokuchi, T., Ishikawa, M., Sugiyama, H. & Saito, Y., 14 Jul 2015, 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 7157504. (2015 IEEE International Magnetics Conference, INTERMAG 2015).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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2011
Spin-based MOSFET and its applications
Saito, Y., Inokuchi, T., Ishikawa, M., Sugiyama, H., Marukame, T. & Tanamoto, T., 2011, 2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT. 1 ed. Electrochemical Society Inc., p. 217-228 12 p. (ECS Transactions; vol. 37, no. 1).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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2010
Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits
Inokuchi, T., Marukame, T., Tanamoto, T., Sugiyama, H., Ishikawa, M. & Saito, Y., 2010, 2010 Symposium on VLSI Technology, VLSIT 2010. p. 119-120 2 p. 5556194. (Digest of Technical Papers - Symposium on VLSI Technology).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
12 Citations (Scopus) -
2009
Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices
Marukame, T., Inokuchi, T., Ishikawa, M., Sugiyama, H. & Saito, Y., 2009, 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. p. 9.2.1-9.2.4 5424385. (Technical Digest - International Electron Devices Meeting, IEDM).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
12 Citations (Scopus)